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Results 1 to 25 of 169

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The effects of the band gap and defects in silicon nitride on the carrier lifetime and the transmittance in c-Si solar cellsJUNG, Sungwook; GONG, Deayoung; JUNSIN YI et al.Solar energy materials and solar cells. 2011, Vol 95, Num 2, pp 546-550, issn 0927-0248, 5 p.Article

Low cost CBD ZnS antireflection coating on large area commercial mono-crystalline silicon solar cellsGANGOPADHYAY, U; KIM, Kyunghae; MANGALARAJ, D et al.Applied surface science. 2004, Vol 230, Num 1-4, pp 364-370, issn 0169-4332, 7 p.Article

Photoluminescence and morphological studies of porous siliconJAEHYEONG LEE; CHAKRABARTY, Kaustuv; JUNSIN YI et al.Applied surface science. 2003, Vol 211, Num 1-4, pp 373-378, issn 0169-4332, 6 p.Article

Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen dopingRAJA, Jayapal; KYUNGSOO JANG; BALAJI, Nagarajan et al.Semiconductor science and technology. 2013, Vol 28, Num 11, issn 0268-1242, 115010.1-115010.6Article

Metal silicide-templated growth of quality Si films for Schottky-diodesKIM, Joondong; JUNSIN YI; ANDERSON, Wayne A et al.Thin solid films. 2010, Vol 518, Num 22, pp 6510-6513, issn 0040-6090, 4 p.Article

Self textured transparent conductive oxide film for efficiency improvement in solar cellKIM, Doyoung; JUNSIN YI; KIM, Hyungjun et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7603, issn 0277-786X, isbn 978-0-8194-7999-0 0-8194-7999-3, 1Vol, 76030G.1-76030G.9Conference Paper

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickelTHANH NGA NGUYEN; VAN DUY NGUYEN; JUNG, Sungwook et al.Applied surface science. 2009, Vol 255, Num 19, pp 8252-8256, issn 0169-4332, 5 p.Article

Memory characteristics of poly-Si using MIC as an active layer on glass substratesTHANH NGA NGUYEN; JUNG, Sungwook; VAN DUY NGUYEN et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 10, issn 0022-3727, 105406.1-105406.6Article

Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applicationsDANG NGOC SON; NGUYEN VAN DUY; JUNG, Sungwook et al.Semiconductor science and technology. 2010, Vol 25, Num 8, issn 0268-1242, 085003.1-085003.5Article

Annealing optimization of silicon nitride film for solar cell applicationYOO, Jinsu; SURESH KUMAR DHUNGEL; JUNSIN YI et al.Thin solid films. 2007, Vol 515, Num 19, pp 7611-7614, issn 0040-6090, 4 p.Conference Paper

Trapping Time Characteristics of Carriers in a-InGaZnO Thin-Film Transistors Fabricated at Low Temperatures for Next-Generation DisplaysVINH AI DAO; THANH THUY TRINH; JANG, Kyungsoo et al.Journal of electronic materials. 2013, Vol 42, Num 4, pp 711-715, issn 0361-5235, 5 p.Article

Optimization of fabrication process of high-efficiency and low-cost crystalline silicon solar cell for industrial applicationsLEE, Jaehyeong; LAKSHMINARAYAN, N; SURESH KUMAR DHUNGEL et al.Solar energy materials and solar cells. 2009, Vol 93, Num 2, pp 256-261, issn 0927-0248, 6 p.Article

Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTsRAJA, Jayapal; KYUNGSOO JANG; CAM PHU THI NGUYEN et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 756-758, issn 0741-3106, 3 p.Article

The improvement of the SiO2/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition systemPARM, I. O; YONGHAN ROH; BYUNGYOU HONG et al.Applied surface science. 2001, Vol 172, Num 3-4, pp 295-300, issn 0169-4332Article

Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film TransistorsKYUNGSOO JANG; RAJA, Jayapal; LEE, Youn-Jung et al.IEEE electron device letters. 2013, Vol 34, Num 9, pp 1151-1153, issn 0741-3106, 3 p.Article

Growth and characterization of ZnSxSe1-x films deposited by close-spaced evaporationVENKATA SUBBAIAH, Y. P; PRATHAP, P; REDDY, K. T. R et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 12, pp 3683-3688, issn 0022-3727, 6 p.Article

Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cellsSHAHZADA QAMAR HUSSAIN; SUNBO KIM; SHIHYUN AHN et al.Solar energy materials and solar cells. 2014, Vol 122, pp 130-135, issn 0927-0248, 6 p.Article

Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devicesBAEK, Kyunghyun; JANG, Kyungsoo; LEE, Youn-Jung et al.Thin solid films. 2013, Vol 531, pp 349-353, issn 0040-6090, 5 p.Article

Processed optimization for excellent interface passivation quality of amorphous/crystalline silicon solar cellsSANGHO KIM; VINH AI DAO; YOUNGSEOK LEE et al.Solar energy materials and solar cells. 2013, Vol 117, pp 174-177, issn 0927-0248, 4 p.Article

Structural, optical and Raman scattering studies on DC magnetron sputtered titanium dioxide thin filmsKARUNAGARAN, B; KIM, Kyunghae; MANGALARAJ, D et al.Solar energy materials and solar cells. 2005, Vol 88, Num 2, pp 199-208, issn 0927-0248, 10 p.Conference Paper

Argon and nitrogen implantation effects on the structural and optical properties of vacuum evaporated cadmium sulphide thin filmsSENTHIL, K; MANGALARAJ, D; NARAYANDASS, Sa K et al.Semiconductor science and technology. 2002, Vol 17, Num 2, pp 97-103, issn 0268-1242Article

Bias-stability improvement using Al2O3 interfacial dielectrics in a-InSnZnO thin-film transistorsKYUNGSOO JANG; JAYAPAL RAJA; JIWOONG KIM et al.Semiconductor science and technology. 2013, Vol 28, Num 8, issn 0268-1242, 085015.1-085015.5Article

Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layerTHANH THUY TRINH; VAN DUY NGUYEN; KYUNGYUL RYU et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085012.1-085012.8Article

Mixed SnO2/TiO2 included with carbon nanotubes for gas-sensing applicationNGUYEN VAN DUY; NGUYEN VAN HIEU; PHAM THANH HUY et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 41, Num 2, pp 258-263, issn 1386-9477, 6 p.Article

A novel low cost texturization method for large area commercial mono-crystalline silicon solar cellsGANGOPADHYAY, U; KIM, K. H; DHUNGEL, S. K et al.Solar energy materials and solar cells. 2006, Vol 90, Num 20, pp 3557-3567, issn 0927-0248, 11 p.Article

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